4. témakör: Félvezető foton-detektorok

Irodalomjegyzék

[1] R.H. Bube. Photoelectronic Properties of Semiconductors. Cambridge University Press, 1992.

[2] R Chin, N Holonyak, GE Stillman, JY Tang, and K Hess. Impact ionisation in multilayered heterojunction structures. Electronics Letters, 16(12):467–469, 1980.

[3] K.K. Choi. Physics of Quantum Well Infrared Photode. Series in Modern Condensed Matter Physics. World Scientific Pub., 1997.

[4] S. Donati. Photodetectors: devices, circuits, and applications. Prentice Hall PTR, 2000.

[5] Majeed M Hayat, Oh-Hyun Kwon, Shuling Wang, Joe C Campbell, Bahaa EA Saleh, and Malvin C Teich. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment. Electron Devices, IEEE Transactions on, 49(12):2114–2123, 2002.

[6] M. Johnson. Photodetection and Measurement: Making Effective Optical Measurements for an Acceptable Cost. McGraw-Hill Professional Engineering. McGraw-Hill Education, 2003.

[7] N. V. Joshi. Photoconductivity: Art: Science & Technology. Optical Engineering. Marcel Dekker, 1990.

[8] M.O. Manasreh. Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors. The Artech House Materials Science Library. Artech House, 1993.

[9] G.R. Osche. Optical detection theory for laser applications. Wiley series in pure and applied optics. Wiley-Interscience, 2002.

[10] B. Saleh. Photoelectron statistics: with applications to spectroscopy and optical communication. Springer series in optical sciences. Springer-Verlag, 1978.

[11] A.H. Sommer. Photoemissive materials: preparation, properties, and uses. Wiley, 1968.

[12] M Teich, K Matsuo, and B Saleh. Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes. Quantum Electronics, IEEE Journal of, 22(8):1184–1193, 1986.

[13] A. Van Der Ziel. Noise in Solid State Devices and Circuits. Wiley, 1986.

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Félvezető optika